Reasunos Semiconductor Technology Co., Ltd.
A POWER SEMICONDUCTOR SYSTEM SOLUTION PROVIDER
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High Power Silicon Carbide MOSFET Based On The National Military Standard Production Line
Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) is a type of power semiconductor device made of silicon carbide material, which is ideal for high-voltage and high-power applications. These Silicon Carbide MOSFETs are widely used in solar inverter, high-voltage DC/DC converter, motor driver, UPS power supply, switching power supply and charging pile, etc. due to its low on-resistance and excellent switching performance. They are designed to provide superior performance, robustness and reliability in the most demanding environments. Moreover, the Silicon Carbide MOSFETs feature fast switching speed, low gate charge, temperature independent switching characteristics, low power loss, and wide operation temperature range.
| Parameter | Value |
|---|---|
| Power | High Power |
| Application | Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, Etc. |
| Product name | Silicon Carbide MOSFET |
| Advantages | Based On The National Military Standard Production Line, The Process Is Stable And The Quality Is Reliable |
| Device Type | MOSFET |
| Frequency | High Frequency |
| Efficiency | High Efficiency |
| Material | Silicon Carbide |
| Type | N |
| Resistance | Low On Resistance |
REASUNOS Silicon Carbide MOSFET (SiC MOSFETs) is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes silicon carbide as the semiconductor material. It is designed to be used in high-frequency and high-efficiency applications, such as photovoltaic inverters, automotive power modules, and industrial motor drives. The SiC Field Effect Transistor is capable of handling high power and providing high efficiency due to its excellent thermal and electrical properties. Furthermore, it has a low on-resistance and a high switching frequency, which makes it a suitable component for power conversion applications.
REASUNOS Silicon Carbide MOSFET is available with a minimum order quantity of 600 and is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The product is offered with a delivery time of 2-30 days, depending on the total quantity. Moreover, the payment terms are 100% T/T in Advance (EXW) and the supply ability is 5KK/month. The device type is N-type with a high frequency and a high power.
We provide technical support and service for our Silicon Carbide MOSFET products. Our knowledgeable team is on hand to answer any questions you may have about our products and provide you with the information you need to make an informed purchase decision.
Our technical support staff will help you troubleshoot any issues you may have with our products, and our dedicated customer service team is there to address any questions or concerns you may have about our products and services.
We strive to provide you with the best possible service, and are committed to making sure you are satisfied with our products and services.
The packaging and shipping of Silicon Carbide MOSFET includes:
A1: The brand name is REASUNOS.
A2: Silicon Carbide MOSFET is manufactured from Guangdong, China.
A3: The minimum order quantity is 600.
A4: The delivery time is 2-30 days, depending on the total quantity.
A5: The payment terms are 100% T/T in advance (EXW).