Reasunos Semiconductor Technology Co., Ltd.
A POWER SEMICONDUCTOR SYSTEM SOLUTION PROVIDER
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High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power.
| Property | Value |
|---|---|
| Current density | 400A/c㎡ |
| Switching speed | Faster Switching Speed |
| Application frequency | 60KHz |
| Advantages | Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements. |
| Product name | High Power IGBT |
| Application | OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc |
| Power | High Power |
| Device Type | Insulated Gate Bipolar Power, High Voltage IGBT, IGBT |
REASUNOS, a Guangdong, CN based manufacturer, offers High Power IGBTs with a confirmed price. Their packaging is dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. Delivery time is 2-30 days, depending on total quantity. Payment terms are 100% T/T in advance (EXW). The supply ability is 5KK/month and the advantages include a narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to vehicle specification requirements. Switching speed is faster, power is high, and application frequency is 60KHz. Applications include OBC, charging pile, welding machine, switching power supply, photovoltaic inverter, and energy storage, etc.
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